wpm1488 single p - channel, - 12 v, - 1. 4 a , power mosfet descriptions the wpm1488 is p - channel enhancement mos field effect transistor. uses advanced trench technology and design to provide excellent r ds (on) with low gate charge. this device is suitable for use in dc - dc conversion , p ower switch and charging circuit . standard product wpm1488 is pb - free. features ? trench techn ology ? supper high density cell design ? e xcellent on resistance for higher dc current ? extremely low threshold voltage ? small package sot - 323 applications ? driver for relay, solenoid, motor, led etc. ? dc - dc converter circuit ? power switch ? load switch ? charging sot - 323 pin c onfiguration (top view) 14 = specific device code * = date code marking order i nformation device package shipping wpm1488 - 3/tr sot - 323 3000 /reel&tape v ds (v) typical rds(on) ( ) i d (a) - 12 0.08 0 @ v gs = C 4.5v - 1.2 0.0 86 @ v gs = C 3.6 v - 1.0 0.10 5 @ v gs = C 2.5v - 1. 0 1 of 7 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
abs olute maximum ratings thermal resistance ratings a surface mounted on fr - 4 board using 1 square in ch pad size, 1oz copper b surface mounted on fr - 4 bo ard using minimum pad size, 1oz copper c pulse width <38 0s, duty cycle <2 % d maximum junction temperature t j =1 50 c . parameter symbol 10 s steady state unit drain - source voltage v ds - 12 v gate - source voltage v gs 8 continuous drain current a d t a =25c i d - 1.5 - 1.4 a t a =70c - 1.2 - 1.1 maximum power dissipation a d t a =25c p d 0.44 0.38 w t a =70c 0.28 0.2 5 continuous drain current b d t a =25c i d - 1.4 - 1.3 a t a =70c - 1.1 - 1.1 maximum power dissipation b d t a =25c p d 0.39 0.34 w t a =70c 0.25 0.22 pulsed drain current c i dm - 10 a operating junction temperature t j - 55 to 150 c lea d temperature t l 260 c storage temperature range t stg - 55 to 150 c parameter symbol typical maximum unit junction - to - ambient thermal resistance a t 10 s r ja 284 3 3 5 c/w steady state 321 3 8 5 junction - to - ambient thermal resistance b t 10 s r ja 3 1 5 3 38 steady state 358 415 junction - to - case thermal resistance steady state r jc 1 1 0 1 6 5 wpm1488 2 of 7 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
electronics characteristics (ta=25 o c , unless otherwise noted) parameter symbol te st conditions min typ max unit off characteristics drain - to - source breakdown voltage b v dss v gs = 0 v, i d = - 250 u a - 12 v zero gate voltage drain current i dss v ds = - 10 v, v gs = 0v - 1 ua gate - t o - s ource leakage current i gss v ds = 0 v, v gs = 8 v 1 u a on characteristics gate threshold voltage v gs(th) v gs = v ds , i d = - 2 5 0 u a - 0.45 - 0.65 - 0.85 v drain - t o - s ource on - r esistance b, c r ds(on) v gs = - 4 .5 v , i d = - 1.2 a 80 120 m? v gs = - 3.6 v , i d = - 1. 0 a 86 140 v gs = - 2 .5 v , i d = - 1. 0 a 105 160 forward transconductance g fs v ds = - 5v, i d = - 1.2a 9 s capacitances , charges input capacitance c iss v gs = 0 v, f = 1.0 mhz, v d d = - 1 0 v 607 pf output capacitance c oss 130 reverse transfer capacitance c rss 120 total gate charge q g(tot) v gs = - 4.5 v, v d d = - 10 v, i d = - 1.2 a 7.85 nc threshold gate charge q g(th) 0.85 gate - to - source charge q gs 1.9 gate - to - drain charge q gd 2.1 switching characteristics turn - on delay time td( on ) v gs = - 4.5 v, v d d = - 10 v, i d = - 1.2 a , r g = 6 ? 30 ns rise time tr 32 turn - off delay time td( off ) 62 fall time tf 18 body diode characteristics forward voltage v sd v gs = 0 v, i s = - 1.0 a - 0. 8 - 1. 5 v wpm1488 3 of 7 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
1 2 3 4 5 5 10 15 20 -i ds -drain to source current (a) -v ds -drain to source voltage(v) v gs =-1.5v v gs =-1.8v v gs =-2.0v v gs =-2.5v v gs =-3.0v v gs =-4.5v 0 2 4 6 8 10 0.00 0.05 0.10 0.15 0.20 0.25 0.30 r ds(on) - on-resistance() -i ds -drain-to-source current(a) v gs =-1.8v v gs =-2.5v v gs =-4.5v 1 2 3 4 5 0.00 0.05 0.10 0.15 0.20 0.25 0.30 r ds(on) - on-resistance() -v gs -gate to source voltage(v) i d =-1.2 a -50 -25 0 25 50 75 100 125 150 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 normalized gate threshold voltage temperature ( o c) i d =-250ua -50 -25 0 25 50 75 100 125 150 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 normalized on-resistance temperature( c) v gs =-4.5v i d =-1.2a 0.0 0.5 1.0 1.5 2.0 2.5 0 2 4 6 8 10 v ds =-5v -i ds -drain to source current(a) -v gs -gate to source voltage(v) t=25 c t=125 c t=-50 c typical characteristics (ta=25 o c, unle ss otherwise noted) output c haracteristics on - r esistance vs. d rain c urrent on - resistance vs. junction temperature transfer c haracteristics on - resistance vs. ga te - to - source voltage threshold voltage vs. temperature wpm1488 4 of 7 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1 2 3 4 5 -i sd -source to drain current (a) -v sd - source to drain voltage (v) t=25 c t=125 c 0 2 4 6 8 10 0 1 2 3 4 5 -v gs -gate voltage (v) qg(nc) v dd =-10v i d =-1.2a 0.1 1 10 0.01 0.1 1 10 100us 1ms 10ms 100ms 1s 10s dc bvdss limit ta=25 c single pulse -i d - drain current (a) -v ds - drain source voltage (v) limit by rdson 1e-4 1e-3 0.01 0.1 1 10 100 1000 0 5 10 15 20 power (w) pulse width (s) t j(max) =150c t a =25c 0 2 4 6 8 10 0 200 400 600 800 1000 v gs =0v f=1mhz c - capacitance(pf) -v ds - drain-to-source voltage (v) ciss coss crss capacitance single pulse power body diode forward voltage safe operating power gate charge characteristics wpm1488 5 of 7 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
1e-6 1e-5 1e-4 1e-3 0.01 0.1 1 10 100 1000 1e-3 0.01 0.1 1 0.5 0.2 0.1 0.05 0.02 0.01 normalized effective transient thermal impedance square wave pulse duration (sec) single pulse transient thermal r esponse (junction - to - ambient) p dm t 1 t 2 1. duty cycle, d=t 1 /t 2 2. per unit base = r ja = 32 1 c/w 3. t jm - t a = p dm r ja 4. surface mounted wpm1488 6 of 7 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
package outline dimensions sot - 323 min. max. min. max. a 0.900 1.100 0.035 0.043 a1 0.000 0.100 0.000 0.004 a2 0.900 1.000 0.035 0.039 b 0.200 0.400 0.008 0.016 c 0.080 0.150 0.003 0.006 d 2.000 2.200 0.079 0.087 e 1.150 1.350 0.045 0.053 e1 2.150 2.450 0.085 0.096 e e1 1.200 1.400 0.047 0.055 l l1 0.260 0.460 0.010 0.018 0 8 0 8 0.525 ref. 0.021 ref. symbol dimensions in millimeters dimensions in inches 0.650 typ. 0.026 typ. wpm1488 7 of 7 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
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